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Posted By: Ramkumar Member Level: Diamond Posted Date: 14 May 2008
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2007 Anna University B.E Electronics and Communication EC 1X01 - ELECTRON DEVICES Question paper
D4507
B.E./B.Tech. DEGREE EXAMINATION, MAY/JUNE 2007.
Annual Pattern - First Year
Electronics and Communication Engineering
Time : Three hours
Maximum: 100 marks
EC 1X01 - ELECTRON DEVICES
(Regulation 2004)
Answer ALL questions.
PART A - (10 x 2 = 20 marks)
1. Define Q factor.
2. If an electron has a constant speed but does not move perpendicular into a uniform magnetic field, what type of path it will describe? What is the time taken to complete one revolution?
3. Draw the equivalent circuit of a zener diode under proper biased condition.
4. How holes contribute current in a semiconductor?
5. In a transistor operating in the active region although the collector junction is reverse biased, the collector current is quite large. Explain.
6. Why is CE configuration considered to be most versatile one?
7. Give the chemical reaction that takes place in Epitaxial growth.
8. Why are we using Aluminium for metallization?
9. Define Intrinsic stand off ratio.
10. Compare SCR with TRIAC.
PART B - (5 x 16 = 80 marks)
11. (a) (i) Derive electrostatic deflection sensitivity of a cathode ray tube. Explain the electrostatic deflection process in detail. (10)
(ii) Discuss on Mutual coupled circuits. (6)
Or
(b) (i) Explain parallel and perpendicular electric and magnetic fields with appropriate diagrams. (10)
(ii) Describe the energy stored in a magnetic field. (6)
12. (a) Explain the following:
(i) Space charge capacitance and diffusion capacitance of a PN diode. (8)
(ii) Tunnel diagram of Tunnel ::liode. (8)
Or
(b) (i) Draw and explain the principles of operation and characteristics of varactor diode. (8)
(ii) Discuss on working of the opto coupler. (8)
13. (a) Explain principle, working, characteristics, advantages, limitations and applications of MOSFET.
Or
(b) Draw the following characteristics and explain:
(i) Drain and transfer characteristics of JFET. (8)
(ii) VO characteristics of CE transistor. (8)
14. (a) Explain the fabrication process of Monolithic integrated circuits with appropriate diagrams. (16)
Or
(b) Discuss on VLSI design rules and layout technique employed for Integrated circuit fabrication. (16)
D 4507
5. (a) (i) Describe the working of Schottky diode and Ohmic contacts. (8)
(ii) Discuss on the implementation of GTO. (8)
Or
(b) (i) Draw and explain TRIAC and DIAC characteristics. (5 + 5)
(ii) What do you understand by LASCR (Light Activated SCR)? Explain. (6)
D 4507
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