My Profile
Active Members
TodayLast 7 Days
more...
Awards & Gifts
Online Exams
Fresher Jobs
Our fresher job section is exclusively for fresh graduates! Find jobs for freshers in major Indian
cities including Bangalore, Chennai, Hyderabad, Pune or Kochi
Resources
Find educational articles, blogs, discussion threads and other resources.
Colleges
Find details about any college in India or search for courses.
|
Download Model question papers & previous years question papers
|
Posted By: GLADWIN Member Level: Silver Posted Date: 22 May 2008
|
2007 Anna University B.E EC1X01 ELECTRON DEVICES Question paper
|
|
|
D4507
B.E./B.Tech. DEGREE EXAMINATION, MAY/JUNE 2007.
Annual Pattern - First Year
Electronics and Communication Engineering
Time : Three hours
Maximum: 100 marks
EC 1X01 - ELECTRON DEVICES
(Regulation 2004)
Answer ALL questions.
PART A - (10 x 2 = 20 marks)
1. Define Q factor.
2. If an electron has a constant speed but does not move perpendicular into a uniform magnetic field, what type of path it will describe? What is the time taken to complete one revolution?
3. Draw the equivalent circuit of a zener diode under proper biased condition.
4. How holes contribute current in a semiconductor?
5. In a transistor operating in the active region although the collector junction is reverse biased, the collector current is quite large. Explain.
6. Why is CE configuration considered to be most versatile one?
7. Give the chemical reaction that takes place in Epitaxial growth.
8. Why are we using Aluminium for metallization?
9. Define Intrinsic stand off ratio.
10. Compare SCR with TRIAC.
PART B - (5 x 16 = 80 marks)
11. (a) (i) Derive electrostatic deflection sensitivity of a cathode ray tube. Explain the electrostatic deflection process in detail. (10)
(ii) Discuss on Mutual coupled circuits. (6)
Or
(b) (i) Explain parallel and perpendicular electric and magnetic fields with appropriate diagrams. (10)
(ii) Describe the energy stored in a magnetic field. (6)
12. (a) Explain the following:
(i) Space charge capacitance and diffusion capacitance of a PN diode. (8)
(ii) Tunnel diagram of Tunnel ::liode. (8)
Or
(b) (i) Draw and explain the principles of operation and characteristics of varactor diode. (8)
(ii) Discuss on working of the opto coupler. (8)
13. (a) Explain principle, working, characteristics, advantages, limitations and applications of MOSFET.
Or
(b) Draw the following characteristics and explain:
(i) Drain and transfer characteristics of JFET. (8)
(ii) VO characteristics of CE transistor. (8)
14. (a) Explain the fabrication process of Monolithic integrated circuits with appropriate diagrams. (16)
Or
(b) Discuss on VLSI design rules and layout technique employed for Integrated circuit fabrication. (16)
D 4507
5. (a) (i) Describe the working of Schottky diode and Ohmic contacts. (8)
(ii) Discuss on the implementation of GTO. (8)
Or
(b) (i) Draw and explain TRIAC and DIAC characteristics. (5 + 5)
(ii) What do you understand by LASCR (Light Activated SCR)? Explain. (6)
D 4507
Return to question paper search
|
|
|
Submit Previous Years University Question Papers and make money from adsense revenue sharing program
Are you preparing for a university examination? Download model question papers
and practise before you write the exam.
|
Watch TV Channels
Watch Asianet TV onlineKairali TV in InternetSurya TV onlineAmritha TV Channel
|