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Posted By: Linci        Member Level: Bronze       Posted Date: 19 Dec 2007

2007 Anna University B.E Electrical and Electronics EC1211-ELECTRONIC DEVICES Question paper



Course: B.E Electrical and Electronics   University: Anna University




B.E/B.TECH DEGREE EXAMINATION,NOV/DEC 2007

Third Semester
Regulations 2004

Electrical and Electronics Engineering
EC 1211 ELECTRONIC DEVICES
(Common to Electronics and Instrumentation Engineering and Instrumentation and Control Engineering branches of Annual pattern candidates admitted in 2006)

Time : Three hours Maximum:100 marks

Answer all questions

PART A (10*2=20 marks)

1. What is meant by depletion region?
2. Define the transition capacitance of a diode.
3. What are power transistors?
4. Which of the BJT configuration is suitable for impedance matching applications? Why?
5. Define pinch off voltage.
6. Give the drain current equation of JFET.
7. Differentiate a PN junction diode and LASER diode.
8. List the applications of opto- electronic devices.
9. Draw the transistor equivalent circuit of SCR.
10. What is LDR?

PART B (5x16=80)

11 (a)With the volt-ampere characteristics, explain the working principle of the diode and also explain the static dynamic resistance of the diod es? `` (Marks-16)
0r
(b) Write a detailed note on:
(i) Diode switching times.(Marks-6)
(ii) applications of diodes (Marks-4)
(iii) capacitance of diodes (Marks-6)
12 (a) For common emitter-bipolar junction transistor configuration, analyze the input and output characteristics. Also, give the inferences and analytical expressions for the same.(Marks-16)
Or
(b) Write a note on
(i) Transistor construction (Marks 4)
(ii) voltage gain and current gain expressions for CB Configuration using transistor hybrid model(Figures necessary) (Marks -12)
13 (a) With neat diagram explain the construction, working characteristics of Unijunction transistor. Give its equivalent circuit. (Marks-16)
Or
(b) Write the construction, operation and characteristics behavior of JFET under various biasing conditions. Give necessary figures. (Marks-16)
14 (a) What is the physics of photo emissivity. Explain in detail, the construction and working of any one optoelectronic device which uses this Principle.(Marks-16)
Or
(b) Give a detailed account on:
(i) Opto couplers and their applications (Marks 8)
(ii) Photo transistors and diodes (Marks-8)
15 (a) (i) Define tunneling phenomenon. Explain how tunnel diodes operates under different operating conditions. In what way it is different from the conventional diodes? Give the necessary energy level diagrams.(Marks-12
(ii)Give the characteristics features of devices belonging to the thyristor family(Marks-4)
Or
(b) (i) Zener diode can be used as a voltage regulator-Justify it.(Marks 8)
(ii) Write a note on PUT.(Marks-8)









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