Members BookmarksPolls Fresher Jobs Strange Photos Academic Projects New Member FAQ  



My Profile
Active Members
TodayLast 7 Days more...



Awards & Gifts
Online Exams

Fresher Jobs


Our fresher job section is exclusively for fresh graduates! Find jobs for freshers in major Indian cities including Bangalore, Chennai, Hyderabad, Pune or Kochi

Resources


Find educational articles, blogs, discussion threads and other resources.

Colleges


Find details about any college in India or search for courses.

Advertisements


website counter




Download Model question papers & previous years question papers

Posted By: kishore       Member Level: Gold       Posted Date: 06 Jun 2008

2007 Jawaharlal Nehru Technological University B.Tech Electronics & Communications Engineering ELECTRONIC DEVICES & CIRCUITS Question paper



Course: B.Tech Electronics & Communications Engineering   University: Jawaharlal Nehru Technological University




1. (a) Derive the expression for the electro static deflection sensitivity in the case of
CRT.
(b) Compare electro static and electro-magnetic deflection sensitivity in all re-
spects. [8+8]
2. (a) Explain about various current components in a forward biased p-n junction
diode.
(b) Find the value of D.C. resistance and A.C resistance of a Germanium junction
diode at 250 C with Io = 25µA and at an applied voltage of 0.2V across the
diode. [8+8]
3. (a) Define the following terms of a half wave rectifier with resistive load.
i. Ripple factor.
ii. Peak inverse voltage.
iii. Rectification efficiency.
(b) A 230 V, 60Hz voltage is applied to the primary of a 5:1 step down, center
tapped transformer used in a full wave rectifier having a load of 900
.If the
diode resistance and the secondary coil resistance together has a resistance of
100
, determine [6+10]
i. dc voltage across the load.
ii. dc current flowing through the load.
iii. dc power delivered to the load.
iv. PIV across each diode
v. Ripple voltage and its frequency.
4. (a) What are the different configurations of BJT?
(b) Derive the relation between and .
(c) Calculate the collector current and emitter current for a transistor with dc =
0.99 and ICBO = 50 µ A when the base current is 20µ A. [6+6+4]
5. (a) Define the different parameters of FET.

(b) What are special semiconductor devices? Give explanation for any two devices.
[8+8]
6. (a) Draw the circuit diagram of emitter follower circuit using n-p-n transistor and
derive expressions for AI ,AV ,Ri,R0 using hybrid model
(b) Derive expressions for the lower and upper cut off frequencies of an n stage
amplifier. [8+8]
7. (a) Prove that the upper cutoff frequency with feedback is ( 1 + A ) times upper
cutoff frequency with out feedback.
(b) For the given circuit(as shown in figure1), calculate Avf , Rif and Rof . The
transistor h-parameters are hie= 2 K, hfe= 100, hre=0. [8+8]

8. (a) Draw the circuit diagram of a RC phases shift oscillator using BJT. Derive
the expression for frequency of oscillators.
(b) Classify different type of oscillators based on frequency range.
(c) Why RC oscillators are not suitable for high frequency applications. [8+4+4]





Return to question paper search

Next Question Paper: Sample Question Papers Accounts

Previous Question Paper: GENERAL LAWS

Related Question Papers:


  • ENVIRONMENTAL STUDIES (Instrumentation & Control Engineering)


  • ADVANCED UNIX PROGRAMMING - Set 1


  • MICROPROCESSORS AND MICROCONTROLLERS (Instrumentation & Control Engineering) - Set 1


  • EMBEDDED SYSTEMS Set No. 4


  • INTERFACING THROUGH MICROPROCESSORS - Set 3


  • Categories


    Submit Previous Years University Question Papers and make money from adsense revenue sharing program

    Are you preparing for a university examination? Download model question papers and practise before you write the exam.


    Contact Us    Privacy Policy    Terms Of Use   

    SpiderWorks Technologies Pvt Ltd. 2006 - 2007 All Rights Reserved.