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Posted By: rama Member Level: Silver Posted Date: 10 Jun 2008
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2008 Anna University B.E Electronics and Communication EC1012 SOLID STATE ELECTRONIC DEVICES Question paper
EC1012 SOLID STATE ELECTRONIC DEVICES
AIM
To have fundamental knowledge about structure of devices, VI characteristics of devices like PN Junction diode, Zener diode, MOSFET, BJT and Opto electronic.
OBJECTIVES:
• To learn crystal structures of elements used for fabrication of semiconductor devices.
• To study energy band structure of semiconductor devices.
• To understand fermi levels, movement of charge carriers, Diffusion current and Drift current.
• To study behavior of semiconductor junction under different biasing conditions. Fabrication of different semiconductor devices, Varactor diode, Zener diode, Schottky diode, BJT, MOSFET, etc.
• To study the VI Characteristics of devices and their limitations in factors like current, power frequency.
• To learn photoelectric effect and fabrication of opto electronic devices.
UNIT I CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS 9
Semiconductor materials- Periodic Structures- Crystal Lattices- Cubic lattices –Planes and Directions-The Diamond lattice- Bulk Crystal Growth-Starting Materials-Growth of Single Crystal lngots-Wafers-Doping- Epitaxial Growth –Lattice Matching in Epitaxial Growth –Vapor –Phase Epitaxy-Atoms and Electrons-Introduction to Physical Models-Experimental Observations-The Photoelectric Effect-Atomic spectra-The Bohr model- Quantum Mechanics –Probability and the Uncertainty Principle-The Schrodinger Wave Equation –Potential Well Equation –Potential well Problem-Tunneling.
UNIT II ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS 9
Bonding Forces and Energy bands in Solids-Bonding Forces in Solids-Energy Bands-Metals, Semiconductors, and Insulators – Direct and Indirect Semiconductors –Variation of Energy Bands with Alloy Composition-Charge Carriers in Semiconductors-Electrons and Holes-Effective Mass-Intrinsic Material-Extrinsic Material – Electrons and Holes in Quantum Wells-Carrier Concentrations-The Fermi Level-Electron and Hole Concentrations at Equilibrium-Temperature Dependence of Carrier Concentrations-Compensation and Space Charge Neutrality-Drift of Carrier in Electric and Magnetic Fields conductivity and Mobility-Drift and Resistance –Effects of Temperature and Doping on Mobility-High –Field effects-The Hall Effect -invariance of the Fermi level at equilibrium -Excess Carrier in Semiconductors-Optical Absorption- Luminescence-Photoluminescence-Electro luminescence-Carrier Lifetime and Photoconductivity –Direct Recombination of Electrons and Holes – Indirect Recombination ; Trapping –Steady State Carrier Generation ; Quasi-Fermi Levels-Photoconductive Devices-Diffusion of Carriers-Diffusion of Processes-Diffusion and Drift of Carrier; Built-in Fields-Diffusion and Recombination; The Continuity Equation –Steady state Carrier Injection; Diffusion Length-The Haynes- Shockley Experiment –Gradients in the Quasi-Fermi levels.
UNIT III JUNCTIONS 9
Fabrication of P-N Junctions-Thermal Oxidation-Diffusion –Rapid Thermal Processing-Ion Implantation-Chemical Vapor Deposition Photolithography-Etching –Metallization-Equilibrium Conditions-The Contact Potential-Equilibrium Fermi Levels –Space Charge at a Junction-Forward –and Reverse –Biased Junctions; -Steady state conditions-Qualitative Description Of current flow at a junction-Carrier Injection-Reverse Bias-Reverse –Bias Breakdown-Zener Breakdown –Avalanche Breakdown-Rectifiers-The Breakdown Diode-Transient and AC Conditions –Time variation of stored charge-Reverse Recovery Transient –Switching Diodes –Capacitance of P-N Junctions-The Varactor Diode-Deviations from the Simple Theory-Effects of contact Potential on carrier injection-Recombination and Generation in the Transition Region-Ohmic Losses –Graded Junctions-Metal –Semiconductor Junctions-Schottky Barriers-Rectifying contacts-Ohmic Contacts-Typical Schottky Barriers-Hetrojunctions
UNIT IV THE METAL –SEMICONDUCTOR-FET 9
The GaAS MESFET-The High Electron Mobility Transistor –Short channel Effects-The Metal Insulator Semiconductor FET-Basic Operation and Fabrication –THE ideal MOS Capacitor-Effects of Real Surfaces-Threshold Voltage –MOS capacitance Measurements- current –Voltage Characteristics of MOS Gate Oxides -The MOS Field –Effect Transistor –Output characteristics-Transfer characteristics- Mobility Models-Short channel MOSFET I-V characteristics –Control of Threshold Voltage –Substrate Bias Effects-Sub threshold characteristics –Equivalent Circuit for the MOSFET-MOSFET Scaling and Hot Electron Effects-Drain –Induced Barrier Lowering –short channel and Narrow Width Effect-Gate –Induced Drain Leakage-BJT Fabrication –Minority carrier distribution and Terminal currents-Solution of the Diffusion Equation in the Base Region-Evaluation of the Terminal currents –Current Transfer Ratio-Generalized Biasing –The coupled –Diode Model-Charge control analysis-Switching –cut off –saturation-The switching cycle-Specifications for switching Transistors-other Important Effects-Drift in the base Narrowing –Avalanche Breakdown –Injection level; Thermal Effects-Base Resistance and Emitter Crowding – Gummel –Poon Model-Kirk Effect-Frequency Limitations of Transistors-Capacitance and Charging Times-Transit Time Effects-Webster Effect-High –Frequency Transistors - Heterojunction Bipolar Transistors.
UNIT V OPTOELCTRONIC DEVICES 9
Photodiodes-Current and Voltage in illuminated Junction-Solar Cells-Photo detectors-Noise and Bandwidth of Photo detectors-Light-Emitting Diodes-Light Emitting Materials-Fiber Optic Communications Multilayer Heterojunctions for LEDs- Lasers-Semiconductor lasers-Population Inversion at a Junction Emission Spectra for p-n junction-The Basic Semiconductor lasers-Materials for Semiconductor lasers-Integrated Circuits –Background –Advantages of Integration –Types of Integrated circuits-Monolithic and Hybrid Circuits-Evolution of Integrated Circuits-Monolithic Device Elements CMOS Process Integration –Silicon –on – Insulator (SOI)-Integration of other Circuit Elements –Charge Transfer Devices –Dynamic Effects in MOS capacitors –The basic CCD-Improvements on the Basic Structure –Applications of CCDs-Ultra Large –Scale Integration (ULSI) –Logic devices –Semiconductor Memories-Testing, bonding , and Packaging-Testing –Wire Bonding –Flip-flop Techniques-Packaging
TOTAL : 45
TEXT BOOK
1. Ben.G.Streetman & Sanjan Banerjee Solid State Electronic Devices (5th Edition) PHI Private Ltd, 2003
REFERENCES
1. Yannis Tsividis: Operation & Mode line of The MOS Transistor (2nd Edition) Oxford University Press, 1999
2. Nandita Das Gupta &Aamitava Das Gupta- Semiconductor Devices Modeling a Technology, PHI, 2004.
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