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Posted By: sunil       Member Level: Diamond       Posted Date: 23 Jun 2008

2008 III B.Tech II Semester Regular Examinations, Apr/May 2008 MICROWAVE ENGINEERING Question paper



Course:   University:




Code No: R05320403




Set No. 4



III B.Tech II Semester Regular Examinations, Apr/May 2008
MICROWAVE ENGINEERING
( Common to Electronics & Communication Engineering and Electronics &
Telematics)

Time: 3 hours


Answer any FIVE Questions
All Questions carry equal marks
? ? ? ? ?

Max Marks: 80



1. (a) Discuss the attenuation in wave guides in detail.
(b) A wave guide operating in TE10mode has dimensions a = 2.26 cm and b = 1
cm. The measured guide wave length is 4 cm. Find
i. Cut o? frequency of the propagating mode
ii. The frequency of operation

iii. Maximum frequency of propagation in this mode.

2. (a) Explain the concepts of propagation delay time for a strip line.

[8+8]

(b) Is the e?ective dielectric constant of a micro strip line a function of relative

dielectric constant justify.

[8+8]


3. (a) Sketch a 4 port hybrid junction and justify that it is a basically a 3 dB direc-
tional coupler.
(b) A matched generator with a power of one watt is connected to the H ? arm
of magic tee C (port 4). The E arm (port 3) is match terminated and the
length of the coplanar arms is the same. Compute the power delivered to the
termination at port 1, 2 and 3 and the power re?ected at port 4 when ports 1

and 2 are match terminated.

[8+8]


4. What is Faraday rotation? Explain the working of a ferrite circulator with neat

sketches. How can it be used as an isolator?

[16]


5. (a) Explain in detail bunching process & obtain expression for bunching parameter
in a two cavity klystron ampli?er.
(b) A re?ex klystron is to be operated at a frequency of 10GHZ. With dc beam
voltage 400v. Repeller spacing 0.1cm for 134 mode. Determine the maximum
value of power & corresponding repeller voltage for beam current of 30mA.
[8+8]

6. (a) Give the di?erent types & explain the characteristics of slow wave structure.
(b) A TWT operates with following parameters:
Vb=2.5KV, Ib=25mA, Zo=10 O, circuit length,L=50,f=9GHz

Find the gain parameter & power gain.

7. (a) Explain the physical structure and construction of IMPATT diodes.



1 of 2

[8+8]






Code No: R05320403




Set No. 4



(b) Draw the graph between negative resistance versus transit angle and explain

its Shape.

[8+8]


8. (a) The signal power at the input of a device is 10 mw. The signal power at the
output of same device is 0.2mw. Calculate the insertion loss in db of this
component.

(b) Explain the bolometric method of measuring microwave power.







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