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Posted Date: 13 Sep 2009 Posted By: Hari Krishnan Member Level: Bronze
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2009 Mahatma Gandhi University B.Tech Applied Electronics and Instrumentation First series examination,third semester applied electronics and instrumentation Question paper
MOUNT ZION COLLEGE OF ENGINEERING
Kadammanitta, Pathanamthitta
First Series Examination
Third Semester-Applied Electronics and Instrumentation
SOLID STATE DEVICES
Max Marks:60
Max Time :2hrs
PART A
Answer any six questions
__________________________
1. What is conductance?Derive the equation for the same for semiconductors.
2. Explain temperature dependance of mobility with plot?
3. Explain the Einstein's equation for a semiconductor?
4. Derive the diode equation.Also find the current flowing through the diode with both forward and
reverse bias with plots?
5. Brieflyexplain the switching characteristics of a pn junction diode with wave forms?
6. Sketch the V-I characteristics of a tunnel diode.Indicate the negative resistance region.What
is it's significance?
7. Derive the expression for brekdown voltage of a pn junction diode?
(6x4=24)
PART B
Answer any three questions
__________________________
8. Derive the equation for mobility for semiconductors.What are the factors affecting mobility?Plot
mobility v/s temperature graph?
9. Sketch the energy band diagram of unbiased pn junction diode and label it.Draw and explain the
V-I characteristics and also the equivalent circuits for both the bias condition with energy band
diagrams?
10.Explain the working principle and V-I characteristics of
(1)Photodiode (2)Varactor diode
Also state their applications
11. (a).Distinguish between the physical mechanisms of zener and avalanche breakdown.
(b).Explain physically the cause of junction capacitance.Derive the equation for diffusion
capacitance.Plot the C-V graph.
(3x12=36)
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