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Posted By: acme Member Level: Silver Posted Date: 15 Apr 2008
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2007 Jawaharlal Nehru Technological University B.E Computer Science VLSI SYSTEMS DESIGN Question paper
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Code No: RR410505 IV B.Tech I Semester Regular Examinations, November 2007 VLSI SYSTEMS DESIGN ( Common to Computer Science & Engineering, Computer Science & Systems Engineering and Electronics & Computer Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks
? ? ? ? ? Set No. 1 1. Implement the following gates with n-MOS transistors only and explain its working (a) 2 -Input NAND gate. (b) 3 -Input NOR gate. [8+8] 2. An p-MOS transistor is operating in the triode region with the following parameters µnCox = 95 µ A/V 2 W/L ( ratio) = 90 Vgs = -4V, Vtn = -1.1V, Vds = -2V . Find its drain current & drain -Source resistance. [16] 3. Design a stick diagram for CMOS logic shown below. Y = (A + B + C + D)1 [16] 4. Design a layout for CMOS 2-input NAND gate. [16] 5. Explain the procedure to optimize power consumption of an isolated logic gate.[16] 6. Draw the basic structure of serial-Parallel multiplier and explain its working principle. [16] 7. Explain how Architecture driven voltage scaling technique reduces the power consumption of the design. [16] 8. Draw the ASM chart for the kitchen timer controller. [16]
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Set No. 2 I 1. Implement the following logic functions using CMOS logic (a) Y = {AB + (C + D)}1 (b) Y = {A(B + C) + D}1 [8+8] 2. Explain working principal of n-MOS transistor with sketches of its structure. [16] 3. Design a stick diagram for CMOS, EX-OR and Inverter gates. [16] 4. Design a layout for CMOS 3-input NAND gate. [16] 5. Explain with suitable example the details of single - Row layout design method. [16] 6. Draw the basic structure of serial-Parallel multiplier and explain its working prin- ciple. [16] 7. Discuss some of the floor planning tips, such that the design can be easy - to- implement and easy - to - change. [16] 8. Explain about switch - level simulation and give rules for evaluating switch - level simulation. [16] ? ? ? ? ? Set No. 3
1. Implement the following gates with CMOS Logic and explain its working (a) 2 - Input AND gate. (b) 4 - Input NOR gate. [8+8] 2. An n-MOS transistor is operating in the triode region with the following parameters µnCox = 90µ A/V 2 W/L ( ratio) = 100 Vgs = 4V, Vtn = 1V, Vds = 2V . Find its drain current & drain -Source resistance. [16] 3. Explain with neat sketches CMOS fabrication using twin - tub process. [16] 4. Implement 3-input NOR gate and 2 input AND gates using static complementary logic. [16] 5. Define faults of a Digital circuit and Explain about struck at 0 /1 faulty models [16] 6. Discuss clearly about the following system Design principles. (a) Pipelining (b) Data-paths [8+8] 7. Explain how power - down modes reduces the power consumption of the design. [16] 8. Clearly explain about event driven simulation with suitable example. [16]
? ? ? ? ? Set No. 4
1. Implement the following gates with n-MOS transistors only and explain its working (a) 2 -Input NAND gate. (b) 3 -Input NOR gate. [8+8] 2. Define different voltage parameters of digital IC and Explain their significance.[16] 3. With respect to IC fabrication explain about Design-rules and scalable design rules [16] 4. Design a layout for CMOS 2-input AND gate. [16] 5. (a) With respect to testability of a Digital design define controllability and observability . (b) Explain the properties of testable digital circuit. [8+8] 6. Draw the circuit diagram of four transistor DRAM cell with storage nodes and explain its working. [16] 7. Explain clearly the detailed routing phase of the floor planning of the chip with few examples by considering all constraints. [16] 8. Clearly explain about event driven simulation with suitable example. [16]
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