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2014 Acharya Nagarjuna University II/IV B.Tech - Semester 1 - Bapatla Engineering College - Electronic Devices - January 2014 Question paper



Course:   University/board: Acharya Nagarjuna University

Are you looking for the old question papers of Electronic Devices - Bapatla Engineering College - B.Tech? This is the original question paper from the B.Tech second year first semester exam conducted by Bapatla Engineering College in January 2014. Feel free to store a copy and use it to prepare for your upcoming exams.



II/IV B.Tech Degree Examinations, January 2014

First Semester

Electronic Devices



Time : 3 hours

Maximum Marks : 60



Answer question No.1 Compulsory

Answer ONE question from each Unit


1. Answer the following [12 x 1 = 12M]
a) Write the examples of acceptor impurities.
b) Write the current equation of a PN diode.
c) Define mean life time of a carrier.
d) What are the applications of LED?
e) Define the term stability factor.
f) Draw the characteristics of UJT.
g) Draw the transfer characteristics of JFET.
h) Write the expression for transition capacitance of a PN junction diode.
i) Define intrinsic standoff ratio.
j) What is meant by thermal stability?
k) Compare CE, CB, CC configurations in terms of voltage gain.
l) Give the applications of CE configuration.


UNIT - I [1 x 12 = 12M]

2. a) What is Fermi level? Prove that Fermi level in an intrinsic semiconductor lies midway in the forbidden band.
2. b) In a P type semiconductor, the Fermi level is 0.3ev above the valance band at a room temperature of 300 K. Determine the new position of the Fermi level for temperature of (i) 350 K (ii) 400 K. (OR)
3. a) Explain the following
(i) Diffusion
(ii) Recombination of charge carriers.
3. b) Explain Hall Effect.


UNIT - II [1 x 12 = 12M]

4. a) Draw and explain V-I characteristics of a PN junction diode.
4. b) Explain the principle of tunnel diode with its VI characteristics. (OR)
5. a) What is the difference between zener breakdown and avalanche breakdown? Give the applications of zener diode.
5. b) Write short notes on LED.

UNIT - III [1 x 12 = 12M]

6. a) Explain the following with necessary circuits.
i) Transistor under CC configuration.
ii) Biasing circuits of BJT.
6. b) Explain about thermistor and sensistor compensation techniques in detail. (OR)
7. a) Define α and β of a transistor. What is the relation between them?
7. b) Draw the circuit of CE hybrid model and derive the expressions for voltage gain, current gain, input resistance and output resistance.

UNIT - IV [1 x 12 = 12M]

8. a) Explain depletion mode MOSFET using drain and transfer characteristics.
8. b) How FET acts as a voltage variable resistor. (OR)
9. Draw and explain the characteristics of
(i) SCR
(ii) DIAC
(iii) Photo transistor.





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