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2014 Acharya Nagarjuna University Electronic Devices - Bapatla Engineering College - B.Tech 2nd Year - Semester 1 - June 2014 Question paper



Course:   University/board: Acharya Nagarjuna University

Do you need the previous question papers of Electronic Devices - Bapatla Engineering College - B.Tech? This is the original question paper from the B.Tech second year first semester exam conducted by Bapatla Engineering College in June 2014. Feel free to make a copy and use it to prepare for your upcoming exams.



II/IV B.Tech Degree Examinations, June 2014

First Semester

Electronic Devices



Time : 3 hours

Maximum Marks : 60



Answer question No.1 Compulsory

Answer ONE question from each Unit


1. Briefly explain following [12 x 1 = 12M]
a) Define cut in voltage.
b) What is doping?
c) Draw the VI characteristics of Zener diode.
d) What is diffusion capacitance?
e) Write the applications of photo diode.
f) What is meant by base width modulation?
g) What is thermal run a way?
h) What is the relationship between μ, gm, rd?
i) Define pinch off voltage.
j) Give the relationship between 'α' and 'β'.
k) Define dark current in a photo transistor.
l) Give the applications of BJT.

UNIT - I [1 x 12 = 12M]

2. a) Derive the continuity equation.
2. b) Briefly explain about Hall Effect. (OR)
3. a) Explain in detail about donor and acceptor impurities. How to get a 'n' type and 'p' type material.
3. b) Explain the mechanism of current conduction by direct and diffusion in semi conductor.

UNIT - II [1 x 12 = 12M]

4. a) Derive the current equation of a PN junction diode. Explain its VI characteristics.
4. b) Explain how an LED is different to conventional diode. Give the applications of LED. (OR)
5. a) Explain the operation of tunnel diode with its characteristics.
5. b) Explain about zener breakdown and avalanche multiplication.

UNIT - III [1 x 12 = 12M]

6. a) Draw and explain input and output characteristics of common emitter configuration.
6. b) Explain different types of stability factors. (OR)
7. a) Compare CE, CB and CC configurations.
7. b) Draw the self biasing circuit using CE configuration and explain how it stabilizes the operating point.

UNIT - IV [1 x 12 = 12M]

8. a) Draw and explain the basic structure of an n channel field effect transistor. Also draw its VI characteristics.
8. b) Distinguish between JFET and MOSFET. (OR)
9. a) Draw and explain VI characteristics of UJT and SCR.
9. b) Explain how FET acts as a switching device.





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