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University of Delhi - M.Sc. Electronics Syllabus


Posted Date: 17 Jun 2008    Resource Type: Articles/Knowledge Sharing    Category: Syllabus

Posted By: Saranya       Member Level: Diamond
Rating:     Points: 3



University of Delhi South Campus
Department of Electronic Science
Proposed Scheme for M.Sc. Course in Electronics
There shall be an M.Sc. Course in Electronics in the Department of Electronic Science.
The duration of this course will be two years.
No person shall be qualified for admission to the M.Sc. course unless he is 20 years of age before 1st of the October of
the year in which he is seeking admission. Provided that the Vice-Chancellor may, on the basis of individual merit,
relax the age limit upto maximum period of six months.
Examinations, Minimum Pass Marks, Promotion and Classification of Successful Candidates
There shall be FOUR Semester Examinations comprised in the course. The minimum pass marks shall be 40% in each
theory paper and 40% in practical in each of the three semesters (I, II \ III). In IV semester it will be 40% in each theory
papers, 40% in Project/Thesis and 40% in Seminar. Minimum pass marks in Summer Training will also be 40%.
I Semester Examination: On completion of the course of study for the period prescribed therein in
November/December of the first year of the course.
At the end of the first semester a student will be promoted to second semester provided he has not failed in more than
two theory papers and has obtained not less than 40% marks in the aggregate of theory and practicals taken separately.
The student will have to essentially repeat and pass in those theory papers in which he has failed along with the papers
of the second semester. A student who is not promoted to the second semester will have to repeat the first semester as a
regular student as and when it runs in the following July-December session.
II Semester Examination: On completion of the course of study for the period prescribed therein in April/May of the
first year of the course.
At the end of the second semester a student will be promoted to the third semester provided he has passed in all the first
semester papers and has not failed in more than two theory papers of the second semester and has obtained not less than
40% marks in the aggregate of theory and practicals taken separately.
The student will have to essentially repeat and pass in those second semester theory papers in which he has failed along
with the papers of the third semester.
A student who has not passed in all the first semester theory papers at the end of the second semester will be deemed
failed in the first semester and will have to join back in the first semester as a regular student in the following month of
July and repeat both first and second semesters in sequence.
A student who is not promoted to the third semester, but has passed in all the theory papers of the first semester will be
considered pass in the first semester and will have to repeat the second semester as and when it runs in the following
January-May session.
III Semester Examination: On completion of the course of study for the period prescribed therein in
November/December of the second year of the course. At the end of the third semester a student will be promoted to
the fourth semester provided he has passed in all the second semester papers and has not failed in more than two theory
papers of the third semester and has obtained not less than 40% marks in the aggregate of theory and practicals taken
separately. The student will have to essentially repeat and pass in those third semester theory papers in which he has
failed along with the papers of the fourth semester.
A student who has not passed in all the second semester theory papers at the end of the third semester will be deemed
failed in the second semester and will have to join back in the second semester as a regular student in the following
month of January and repeat both second and third semesters in sequence.
A student who is not promoted to the fourth semester, but has passed in all the theory papers of the second semester
will be considered pass in the second semester and will have to repeat the third semester as and when it runs in the
following July-December session.
IV Semester Examination: On completion of the course of study for the period prescribed therein in April/May of the
second year of the course.
At the end of the fourth semester a student will be declared successful provided he has passed in all the third semester
papers and has obtained not less than 40% marks in the aggregate of theory, project/thesis and seminar taken
separately.
If the end of the fourth semester a student has passed in all the third semester papers and has not failed in more than
two theory papers of the fourth semester and has obtained not less than 40% marks in the aggregate of theory,
project/thesis and seminar taken seperately, the student will have to essentially repeat and pass in those fourth semester
theory papers in which he has failed during the semester exams held in the following November/December.
A student who has not passed in all the third semester theory papers at the end of the fourth semester will be deemed
failed in the third semester and will have to join back in the third semester as a regular student in the following month
of July and repeat both third and fourth semesters in sequence.
A student who has not passed the fourth semester, but has passed in all the theory papers of the third semester will be
considered pass in the third semester and will have to repeat the fourth semester as and when it runs in the following
January-May session.
At the end of the fourth semester the successful candidates shall be classified on the basis of marks obtained as I, II and
III division; 60% and above I division, 50% to less than 60% II division, 40% to less than 50% III division.
NOTE: A student who is deemed failed in any semester will join as a regular student over and above the allocated seats
for the course Attendance in two-thirds of the theory classes and three-fourths of the practical classes is compulsory,
failing which the student will not be allowed to appear in the examination.
Each Semester calendar will ensure a minimum of 40 lectures in each theory course of study.
In each theory paper 20 percent of marks are reserved for Sessional Tests, which will be awarded as the average of two
best of three tests conducted by the teacher.
Students will be required to go for Industrial Training for two months in Summer Vacation between IInd and IIIrd
Semester.
The total span period for the course will be four years.
A student’s admission will be treated as cancelled if he is absent for two weeks continuously from the date of
admission.
Scheme of Examination: The following shall be the scheme of examination for the course:
SEMESTER I
1.1 High-level Computer Languages and Operating Systems 50
1.2 Engineering Mathematics 50
1.3 Network Analysis and Synthesis 50
1.4 Advanced Analog and Digital Circuit Design 50
1.5 Practical I: Engineering Drawing\Workshop Practice 25
1.6 Practical II: Electronic Circuits 25
1.7 Practical III: Microprocessors 25
1.8 Practical IV: Computational Techniques 25
Semester I total 300
SEMESTER II
2.1 Electromagnetics, Antenna and Propagation 50
2.2 Semiconductor Devices and Materials 50
2.3 Microprocessors 50
2.4 Signal Systems and Control 50
2.5 Practical I: Electromagnetics 25
2.6 Practical II: Materials and Semiconductor Devices 25
2.7 Practical III: Circuit Design and Simulation 25
2.8 Practical IV: Electrical Machines and Control Systems 25
Semester II total 300
Summer Training (8 weeks) 50
SEMESTER III
3.1 Optical Electronics 50
3.2 Integrated Circuit Technology 50
3.3 Digital Signal Processing 50
3.4 Communication Systems 50
3.5 Practical I: Optical Electronics 25
3.6 Practical II: Science and Technology of
Semiconductor Devices 25
3.7 Practical III: Digital Signal Processing 25
3.8 Practical IV: Communication Systems 25
Semester III total 300
SEMESTER IV
4.1 Quantum Electronics 50
4.2 VLSI Circuit Design and Device Modeling 50
4.3 Modern Communication Systems 50
4.4 Microwave Electronics 50
4.5 Seminar 25
4.6 Lectures from Industry 25
4.7 Project 200
Semester IV total 450
Grand Total 1400
SEMESTER I
1.1 High-level Computer Languages and Operating Systems
Operating Systems: familiarity with various operating systems like DOS, OSII, GUI like Windows, UNIX\LINUX.
Details of one operating system such as UNIX: introduction, multitasking, multiuser capabilities, UNIX basics,
files and directories, understanding the UNIX shell, text processing in the UNIX environment, editors like VI,
EMAC, SED. Programming languages (one high level language such as C++): introduction to C++ and object
oriented programming, development environment, compiling and linking the source code, brief look at crout,
comments, variable and constants, expressions and statements, functions, classes, pointers, references, overloading,
arrays, inheritance, special classes and functions, streams and files, the preprocessor, object-oriented analysis and
design, templates, exceptions & error handling, standard libraries and bit manipulation.
1.2 Engineering Mathematics
Sturm-Liouville’s problem: applications and examples. Calculus of variations with examples. Partial differential
equations: Laplace, wave and diffusion equations in various coordinate systems. Integral equations and methods
of solutions. Green’s function technique and its application. Approximate techniques of engineering mathematics:
perturbation method, variational methods, method of weighted residues, WKB method. Contour integration,
conformal mapping. Transforms: Laplace, Fourier and FFT.
1.3 Network Analysis and Synthesis
Time domain analysis of networks (differential equation approach). Thevenin and Norton’s theorems, reciprocity
theorem, Tellagan’s and Millman’s Theorems. System function approach to network analysis, graph theory, mesh
and node analysis, poles and zeros. Laplace Transform, Hurwitz polynomials, positive real functions. Synthesis of
reactive ports by Foster’s and Cauer’s Methods. Synthesis of R-L, R-C, and R-L-C networks.
1.4 Advanced Analog and Digital Circuit Design
Practical transistor (BJT, FET) circuit design of amplifiers (single and multistage, audio and RF range) and power
amplifiers. Design process as a troubleshooting tool. Oscillators, Mixers and PLL. Review of Logic families,
tabular and computer aided minimisation procedures. Programmable Logic Array. Clock mode sequential
machines, incompletely specified sequential machines and fundamental mode sequential machines.
1.5 Practical I: High-level Computer Languages and Operating Systems
1.6 Practical II: Electronic Circuits
1.7 Practical III: Microprocessors
1.8 Practical IV: Computational Techniques
SEMESTER II
2.1 Electromagnetics, Antenna and Propagation
Transmission lines: transmission line equation in time and frequency domain,losses and dispersion, reflection from
an unknown load; quarter wavelength, single stub and double stub matching; Smith Chart and its applications.
Maxwell’s equations, constitutive relations, wave equation, plane wave functions, rectangular waveguide, circular
waveguide, dielectric slab waveguide, surface guided waves. Antenna parameters, radiation from simple dipole
and aperture, concept of antenna arrays, end fire and broadside arrays, horn antenna, microstrip antenna, parabolic
disc antenna. Ground wave, space wave and ionospheric propagation. Communication link budget for ground
transmission.
2.2 Semiconductor Devices and Materials
Crystalline, polycrystalline and amorphous semiconductors: energy bands, carrier transport, excess carriers,
injection and recombination of the excess carriers, the mechanisms involved. Basic equations for semiconductor
device operations: continuity equation, current flow equation, carrier transport equation and their solutions. Binary,
ternary and quaternary compounds and their applications. Characterisation of semiconducting materials. p-n
Junction diodes: abrupt and linear, electrical breakdown, tunnel diode, Schottky barrier diode, majority carrier
diodes. Microwave diodes : varactor diode, p-i-n diode, transferred electron devices. Optoelectronic devices: solar
cell, photodetector, LED, semiconductor laser. JFET, MESFET, MOS capacitor, MIS diode, MOSFET. Basic idea
of charge coupled Devices. Quantum well structures and low dimension physics.
2.3 Microprocessors
Microprocessor based design, design constraints, microprocessor selection, hardwareimplementation, software
implementation, hardware debugging, software debugging. Introduction to 8086, 8088, 80186, 80188, 80286,
6800, 68000 and other latest chips of Intel/Motorola microprocessors. 8086 internal architecture, introduction to
programming the 8086, 8086 family assembly language programming. 8086 hardware review, addressing memory
and ports in microcomputer systems, 8086 timing parameters. Digital interfacing, programmable parallel ports and
hand-shake, input/output, interfacing the microprocessor to keyboards, alphanumeric displays and high power
devices. The 8086 Maximum code, DMA data transfer interfacing and refreshing dynamic RAM, processors with
integrated peripherals, the 80186, the 8087 math coprocessor. Multiple bus microcomputer system.
2.4 Signal Systems and Control
Introduction with examples of various kinds of continuous and discrete time signals and their mathematical
representation. Signal energy and power. Even and odd signals. Periodic, exponential and sinusoidal signals.
Unit impulse and unit step functions for both discrete and continuous time signals. Examples and mathematical
representation of continuous and discrete time systems. Difference equation. Basic vector matrix form of state
equation. Basic system properties. Discrete time Linear Time Invariant(LTI) systems with convolution sum.
Continuous time LTI system with convolution integral.
Fourier series and transform application to analysis of signals and systems.
Introduction to control with examples of feedback control systems from several fields. Block diagram, transfer
function and signal flow graph. Mathematical modelling of physical systems. Time domain and frequency domain
analysis of control systems. Stability criteria, root-locus techniques.
2.5 Practical I: Electromagnetics
2.6 Practical II: Electronic Materials and Semiconductor Devices
2.7 Practical III: Circuit Design and Simulation
2.8 Practical IV: Electrical Machines and Control Systems
SEMESTER III
3.1 Optical Electronics
Review of basic optics: wave propagation, polarisation, diffraction , Gaussian beams. Electro-optic effect, electro
optic modulators and their design considerations. Acousto-optic effect, Raman Nath and Bragg diffraction
acousto-optic modulators and deflectors. Principles of optical communication systems, optical sources and
detectors. Optical fibers: modes of an optical fiber, multimode fibers, single mode fibers and their propagation
characteristics. Dispersion managment in optical fibers and link design considerations. Integrated optics: planar
and channel waveguides, directional couplers, optical switch, electro-optic and acousto-optic waveguide devices.
Display devices, holography and optical information processing.
3.2 Integrated Circuit Technology
Material purification. Epitaxial growth: LPE, VPE, MBE. Clean room specifications and requirements. Vacuum
technology, sputtering, oxidation, growth mechanism and kinetics (thin and ultrathin oxides), oxidation techniques,
redistribution of dopants at the interface and oxidation induced defects.
Diffusion: Fick’s law, diffusion mechanism, measurement techinques, diffusion in SiO$_2$. Ion Implantation: systems
and dose control, ion range, ion stopping, knock on ranges, metallization choices. Etching: dry etching, pattern
transfer, plasma etching, sputter etching, control of etch rate and selectivity, control of edge profile. Process simulation
and process integration. Lithography: optical, electron beam, ion beam, X-ray lithography, lift off, dip pen. Pattern
generation. Fabrication of few devices like MMIC, laser diode etc.
3.3 Digital Signal Processing
Discrete time signal analysis and linear systems. Sampling of continuous time signals. Z-transform, properties of
region of convergence of z-transform, inverse z-transform, unilateral z-transform. Structures of discrete time
systems, block diagram and signal flow graph representation of linear constant coefficient difference equation.
Basic structures for IIR and FIR filters, lattice structures, effect of coefficient quantisation, effects of round-off
noise in digital filters. Filter design techniques, Discrete Fourier Transform and Fast Fourier Transforms. Concept
of multirate digital signal processing.
3.4 Communication Systems
Frequency allocation and standards. Analog Transmission: AM, FM and PM (modulation, demodulation
techniques and noise Analysis), AM and FM transmitters and receivers. Digital transmission: sampling and digital
multiplexing techniques, PAM, PWM, PPM, PCM, DM, line codes, information theory, ASK, FSK, PSK and
QAM.
3.5 Practical I: Optical Electronics
3.6 Practical II: Science and Technology of Semiconductor Devices
3.7 Practical III: Digital Signal Processing
3.8 Practical IV: Communication Systems
SEMESTER IV
4.1 Quantum Electronics
Interaction of radiation with matter: light amplification and laser operation. Optical resonators. Properties of laser
radiation, mode selection, Q-switching and mode locking. Various types of lasers and applications: gas lasers,
solid-ion lasers etc. Semiconductor lasers. Optical amplifiers: semiconductor amplifiers, doped fiber amplifiers,
design considerations, amplified spontaneous emission (ASE) and noise figure. Nonlinear optics: second and third
order nonlinearity, second harmonic generation; sum and difference frequency generation, parametric
amplification, stimulated Raman and Brillouin scattering, self phase modulation, temporal and spatial solitons.
4.2 VLSI Circuit Design and Device Modeling
Passive elements design, design of silicon integrated circuits. Basic MOS inverter design, transfer characteristics,
logic threshold, NAND \ NOR logic, transit time and inverter time delay, depletion and enhancement modes,
CMOS inverter, inverting and non-inverting type super buffers. Optimization of NMOS and CMOS inverters,
noise margins MOS design rules. MOS layers, Stick diagrams, NMOS design layout diagrams, CMOS design,
design rules and layout. Lamda based design rules. Scaling of MOS Circuits. Functional limitations to scaling,
scaling of wires and interconnections. MOS memories and programmable logic arrays, non-volatile semiconductor
memeories with MOS technology. General considerations associated with VLSI design. Design of a four-bit
shifter, design of an ALU subsystem. Physical model for Si VLSI, MOSFET modeling, short channel structures,
scaled down MOS performance. Packaging of VLSI devices, packaging types. Packaging design consideration,
VLSI assembly technology and fabrication technologies. Mechanism of yield loss in VLSI, modeling of yield loss
mechanism, reliability requirements for VLSI. Failure mechanism in VLSI. Fault finding in VLSI chips.
4.3 Modern Communication Systems
Data transfer and computer networking: packet switching, ISDN, ATM, LAN, WAN, Internet and WAP. Digital
Radio Communication Systems: Transmission media, sampling, multiplexing, digital modulation and multiple
access techniques.
Satellite Communication Systems: principles of satellite communication, modulation;, multiplexing and multiple
access techniques; satellite services like DBS, VSAT etc. Mobile communication: specifications, design approach
and details. Optical Communication Systems: network topologies, Fiber Distributed Data Interface (FDDI)
network, Synchronous Optical Network (SONET/SDH), Asynchronous Transfer Mode (ATM), Wavelength
Division Multiplexing (WDM) and its network implementation
4.4 Microwave Electronics
Introduction to microwaves and their applications; Klystron amplifiers: operation and analysis, power and
efficiency, multi cavity klystron. Reflex klystrons: operation and analysis, electronic admittance, electronic tuning,
power output and efficiency. Magnetrons: operation and analysis. Travelling wave tubes: operation, gain
bandwidth, coupling and focusing methods, applications. Avalanche Diode, Gunn effect and Gunn diode
oscillators. Solid state microwave amplifiers, oscillators and mixers. Microwave components: attenuator, phase
shifter, slotted lines, frequency meter, directional couplers, E-plane Tee, Magic Tee and Ferrite devices. Basic
measurements of frequency, SWR, impedance and power at microwave frequencies. Principles of microwave LOS
communication. Introduction of RADAR.
4.5 Seminar
4.6 Lectures from Industry
4.7 Project

For more details, visit http://www.du.ac.in/course/syllabi/MSc%20Electronics.pdf




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