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EC1202 ELECTRON DEVICES SYLLABUS
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EC1202 ELECTRON DEVICES
AIM
The aim of this course is to familiarize the student with the principle of operation capabilitis and limitation of various electron devices so that he/she will be able to use these devices effectively.
OBJECTIVE
On completion of this course the student will understand
*The basics of electron motion in electric field and magnetic field
*Mechanisms of current flow in semi conductors
*Diode operation and switching characteristics
*Operation of BJT,FET,MOSFET metal semiconductor rectifying and ohmic contacts and power control devices
UNIT I ELECTRON BALLISTICS AND INTRINSIC SEMICONDUCTORS
Force on charge in electric field-Motion of Charge in uniform and time varying electric fields.Forces on a moving charge in a magnetic field-calculation of cyclotron frequency-calculation of electrostatic and magnetic deflection sensitivity.
Energy band structure of conductors,semiconductors and insulators-Density distribution of availabe energy states in semiconductors-Fermi-Diac probability distribution function at different temperature.Thermal generation of carriers-calculation of electron and hole densities in intrinsic semiconductors-intrinsic concentration-Mass Action Law.
UNIT II EXTRINSIC SEMICONDUCTOR AND PN JUNCTIONS
N and P type semiconductors and their energy band structures-Law of electrical neutrality-calculation of location of Fermi level and free electron and hole densities in extrinsic semiconductors-Mobility,drift current and conductivity-Difusion current-Continuity equation-Hall effect.
Band structure of PN junction-Current Component in a PN junction-Derivation of diode equation-Temperature dependance of diode characteristics.
UNIT III SWITCHING CHARACTERISTICS OF PN JUNCTION AND SPECIAL DIODES
Calculation of transition and diffusion capacitance -Varactor diode-charge control description of diode switching characteristics of diode-Mechanism of avalanche and Zener breakdown-Temperature dependance of breakdown voltages-Backward diode-Tunneling effect in thin barriers. Tunnel diode-photo diode-Light emiting diodes.
UNIT IV BIPOLAR JUNCTION TRANSISTORS AND FIELD EFFECT TRANSISTORS
Construction of PNP and NPN transistors-BJT current components-Emitter to collector and base to collector current gains-Base width modulation CB and CE characteristics-Breakdown characteristics-Eber-Moll model-Transistor switching times.
Construction and characteristics fo JFET .Relation between Punch off voltage and drain current Derivation.MOSFETS-Enhancement and depletion types.
UNIT V METAL SEMICONDUCTOR CONTACTS ADN POWER CONTROL DEVICES
Metal Semiconductor Contacts-Energy band diagram of metal semiconductor junction Schottky diode and ohmic contacts.
Power control devices.Characteristics and equivalent circuit of UJT-intrinsic stand of ration .PNPN diode-Tow transistor model.SCR.Triac.Diac.
TUTORIAL
TEXT BOOK
1.Jacob Millman & Christos C.Halkias,"Electronic Devices and Circuits"Tata McGraw Hill,1991.
REFERENCES
1.Nandita Das Gupta and Amitava Das Gupta,Semiconductor Devices-Modelling and Technology,Prenctice Hall of India,2004.
2.Donald A.Neaman."Semiconductor Physics and Devices" 3rd Edition,Tata McGraw Hill,2002.
3.S.Salivahan,N.SureshKumar and A.Vallavaraj,Electronic Devices and Circuits,TMH, 1998.
4.S.M.Sze,Semiconductor Devices-Physics and Technology-2nd Edition-John Wiley,2002.
5.Ben G.Streetman and Sanjay Banerjee,Solid State Electronic Devices,Pearson Education,2000.
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