CBSE Indian Institute of Technology Khargpur M.E Elec and Telecommunication University model question papers

Posted Date: 13 Apr 2009      Posted By:: sailaja    Member Level: Gold  Points: 5 (₹ 1)

# 2009 M.E. Electronics and Telecommunications CBSE Indian Institute of Technology Khargpur M.E Elec and Telecommunication University Question paper

 Course: M.E. Electronics and Telecommunications University/board: Indian Institute of Technology

CBSE Indian Institute of Technology Khargpur M.E Electronics and Telecommunications

Q.1 — Q.20 Carry One Mark Each.
1. The rank of the matrix
1 1 1
1 -1 0 is:
1 1 1
(A) 0
(B) 1
(C) 2
(D) 3
2. VxVxP, wherePisa vector, is equal to
(A) PxVxP-V2P
(B) V2P+V(V.P)
(C) V2P+VxP
(D) v(v.P)-v2P
3. [[(vxP).ds, where P is a vector, is equal to
(A) 4P.dI
(B) VxVxP.dI
(C) 4VxP.dI
(D) [[[V.Pdv
4. A probability density function is of the form
p(x) = Ke aix1 XE
The value of K is
(A) 0.5
(B) 1
(C) O.5cL
(D) x
5. A solution for the differential equation
k(t)+2x(t) = 5(t)
with initial condition x(0 —) = 0 is:
(A) e 2u(t)
(B) e2u(t)
(C) e u(t)
(D) &u(t)
6. A low-pass filter having a frequency response H(ja) = A(ai)edoes not
produce any phase distortion if
(A) A(a) = Cai2,Ø(ai) = kai3
(B) A(a) = Cai2,Ø(ai) = ko.
(C) A(a)=Ca,Ø(a)=ka2
(D) A(a)=C, )=ka1
7. The values of voltage (V3) across a tunnel-diode corresponding to peak and valley currents
are V, and V1 respectively-:- The range of tunnel-diode voltage VD for which the slope of its
IVD characteristics is negative would be
(A) V3
(B) O
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(C) V,V
(D) VdVV
8. The concentration of minority carriers in an extrinsic semiconductor under
equilibrium is:
(A) directly proportional to the doping concentration
(B) inversely proportional to the doping concentration
(C) directly proportional to the intrinsic concentration
(D) inversely proportional to the intrinsic concentration
9. Under low level injection assumption, the injected minority carrier current for an extrinsic
semiconductor is essentially the
(A) diffusion current
(B) drift current
(C) recombination current
(D) induced current
10. The phenomenon known as “Early Effect" in a bipolar transistor refers to a reduction of the
effective base-width caused by
(A) electron-hole recombination at the base
(B) the reverse biasing of the base-collector junction
(C) the forward biasing of emitter-base junction
(D) the early removal of stored base charge during saturation-to-cutoff switching.
11. The input impedance (Z,)and the output impedance (Z0)of an ideal transconductance
(voltage controlled current source) amplifier are
(A) Z,=0,Z0=0
(B) Z,=O,Z0=oo
(C) Z,=oo,Z0=O
(D) Z = 00, =
12. An n-channel depletion MOSFET has following two points on its ID VGS curve:
(i) VGS = 0 at ID = l2mA and
(ii) VGS = —6 Volts at ID =
Which of the following Q-points will give the highest trans-conductance gain for
small signals?
(A) VGS = —6 Volts
(B) VGS = —3 Volts
(C) VGS = 0 Volts
(D) VGS = 3 Volts
13. The number of product terms in the minimized sum-of-product expression obtained
through the following K-map is (where “d" denotes don't care states)
1001
0d00
00d 1
1001
(A) 2
(B) 3
(C) 4
(D) 5
14. The Dirac delta function 8(t) is defined as
(A) 8(t)=1 t=O.
L° otherwise
100 t=O
(B) 8(t)=.
LO otherwise
(C) 8(t) = = . and [8(t)dt = 1
L otherwise
(D) 8(t)=4°° t=O and [8(t)dt=1
L otherwise
15. The open-loop transfer function of a unity-gain feedback control system is given by The
gain margin of the system in dB is given by
(A) 0
(B) 1
(C) 20
(D)
16. The electric field of an electromagnetic wave propagating in the positive zdirection is given
by
E=asin(at—flz)+asinot—flz+.
The wave is
(A) linearly polarized in the z-direction
(B) elliptically polarized
(C) left-hand circularly polarized
(D) right-hand circularly polarized
17. A transmission line is feeding 1 Watt of power to a horn antenna having a gain of
10 dB. The antenna is matched to the transmission line. The total power radiated by the horn
antenna into the free-space is:
(A) 10 Watts
(B) 1 Watt
(C) 0.1 Watt
(D) 0.01 Watt
18. The eigenvalues and the corresponding eigenvectors of a 2 x 2 matrix are given by
Eigenvalue Eigenvector
A1=8
A2=4 v2=[hil
The matrix is:
(A) 6 2 L2 6
(B) 6 L6 4
(C) r L 2
(D) 8 L8 4
19. For the function of a complex variable W = lnZ
(where, W=u+jv and Z=x+jy),the u=constant lines get mapped in Z-plane as
(A) set of radial straight lines
(B) set of concentric circles
(C) set of confocal hyperbolas
(D) set of confocal ellipses
20. Three companies, X, Y and Z supply computers to a university. The percentage of
computers supplied by them and the probability of those being defective are tabulated below.
Given that a computer is defective, the probability that it was supplied by Y is:
(A) 0.1
(B) 0.2
(C) 0.3
(D) 0.4
21. For the matrix [ jthe eigenvalue corresponding to the eigenvector is:
(A) 2
(B) 4
(C) 6
(D) 8
22. For the differential equation + k2y = 0 the boundary conditions are
Compan
y
°h of computers
supplied
Probability of being defective
X 60°h 0.01
Y 30°h 0.02
Z 10°h 0,03
(i) y=Oforx=Oand
(ii) y=Oforx=a
The form of non-zero solutions of y (where mvaries over all integers) are m,rx
(A) y=AmsIn
m a
m,rx
(B) y= AmCO5
m a
(C) Y=4m
mrx
(D) y=Amea
23. Consider the function f (t) having Laplace transform
2 2 Re[sl>O
S +a)0
The final value of f(t)would be:
(A) 0
(B) 1
(C) —1 f(oo) 1
(D)
24. As x is increased from — to 00, the function
ex
f(x)=
1 + ex
(A) monotonically increases
(B) monotonically decreases
(C) increases to a maximum value and then decreases
(D) decreases to a minimum value and then increases
25. The first and the last critical frequencies (singularities) of a driving point impedance
function of a passive network having two kinds of elements, are a pole and a zero
respectively. The above property will be satisfied by
(A) RL network only
(B) RC network only
(C) LC network only
(D) RC as well as RL networks

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